PD517BA Datasheet - UNIKC

PD517BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -55 -35 -150 Avalanche Current IAS -38 Avalanche Energy L = 0.1mH EAS 72 Power Dissipation TC= 25 °C TC= 100°C PD 62 25 Jun