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PD510BA Datasheet - UNIKC

PD510BA N-Channel MOSFET

PD510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.3mΩ @VGS = 10V ID 92A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 92 58 180 Avalanche Current IAS 38 Avalanche Energy L =0.1mH EAS 74.2 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Jun.

PD510BA Datasheet (487.59 KB)