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PD55025-E RF POWER transistor

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Description

PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

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Features

* Excellent thermal stability
* Common source configuration
* POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V

Applications

* It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal s

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PD55025-E POWER transistor STMicroelectronics
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