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PD85035-E RF POWER transistor

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Description

PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs .
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

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Features

* Excellent thermal stability
* Common source configuration
* POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
* Plastic package
* ESD protection

Applications

* It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an idea

PD85035-E Distributors

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