PD85050S RF power transistor

STMicroelectronics

Description

PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet *preliminary data .
The PD85050S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

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Datasheet Specifications

Part number: PD85050S
Manufacturer: STMicroelectronics ↗
File Size: 447.60 KB
Datasheet: PD85050S-STMicroelectronics.pdf
Description: RF power transistor

Features

* Operating frequencies from 1 MHz to 1000 MHz
* POUT > 50W with 12dB gain @ 870 MHz / 13.6V
* Unmatched device for wideband operation
* Bi-directional ESD
* Excellent Thermal stability
* High linearity for TETRA, DMR, SSB modulations
* Housed in PowerSO-10RF plastic pack

Applications

* It operates at 13.6 V in common source mode at frequencies up to 1 GHz. The PD85050S boasts excellent gain, linearity and reliability thank to ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance of the PD85050S ma

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