PD85050S Datasheet - STMicroelectronics

RF power transistor

PD85050S Features

* Operating frequencies from 1 MHz to 1000 MHz

* POUT > 50W with 12dB gain @ 870 MHz / 13.6V

* Unmatched device for wideband operation

* Bi-directional ESD

* Excellent Thermal stability

* High linearity for TETRA, DMR, SSB modulations

* Housed in PowerSO-10RF plastic pack

PD85050S General Description

The PD85050S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies up to 1 GHz. The PD85050S boasts excellent gain, linearity .

PD85050S Datasheet (447.60 KB)