RF4L10700CB4 - RF power LDMOS transistor

STMicroelectronics

RF4L10700CB4 Datasheet Preview — Preview of RF4L10700CB4 PDF

Datasheet Details

Part number	RF4L10700CB4
Manufacturer	STMicroelectronics ↗
File Size	521.01 KB
Description	RF power LDMOS transistor
Datasheet	RF4L10700CB4-STMicroelectronics.pdf

RF4L10700CB4 Product details

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range.

Features

Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched pair transistors in push-pull configuration.
Large positive and negative gate-source voltage range for improved class C operation.
Optimized for Doherty.

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Published: Mar 19, 2023 |