RF4L10700CB4 Datasheet (STMicroelectronics)

RF4L10700CB4, RF power LDMOS transistor

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range.

It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation.

It is qualified up to 40 V operation.

RF4L10700CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched pair transistors in push-pull configuration

* Large positive and negative