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RF4L15400CB4 RF Power LDMOS transistor

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Description

RF4L15400CB4 Datasheet 400 W, 40 V, 1.2 to 1.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain .
The RF4L15400CB4 is a 400 W, 50 V high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 1.

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Features

* Order code Frequency VDD POUT Gain Efficiency RF4L15400CB4 1.5 GHz 40 V 400 W 18.5 dB 57%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negativ

Applications

* 1.3 and 1.5 GHz particle accelerator

RF4L15400CB4 Distributors

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STMicroelectronics RF4L15400CB4-like datasheet