STB23N80K5 Datasheet (STMicroelectronics)

STB23N80K5, N-Channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Product st

STB23N80K5 Features

* Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected PTOT 190 W Applications

* Switching appl