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STB20N60M2-EP - N-CHANNEL POWER MOSFET

STB20N60M2-EP Description

STB20N60M2-EP Datasheet N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) .
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

STB20N60M2-EP Features

* Order code VDS RDS(on) max. STB20N60M2-EP 600 V 0.278 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* Very low turn-off switching losses
* 100% avalanche tested

STB20N60M2-EP Applications

* Switching applications

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STB20N60M2-EP-like datasheet