STB20N60M2-EP

N-CHANNEL POWER MOSFET

STMicroelectronics

STB20N60M2-EP Features

* Order code VDS RDS(on) max. STB20N60M2-EP 600 V 0.278 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected Applications

* Switching applicatio

STB20N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su.

STB20N60M2-EP Datasheet (452.22 KB)