STB20NK50Z - N-CHANNEL POWER MOSFET
c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout.
In te addition to a significant reduction in on- resistance, this device is designed to
STB20NK50Z Features
* Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s)
* Extremely high dv/dt capability du
* 100% avalanche tested ro
* Gate charge minimized P
* Very low intrinsic capacitances te
* Very good manufacturing repeatability sole Application Ob
* Switching
