STB20NK50Z

N-CHANNEL POWER MOSFET

ST Microelectronics

* Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s)

* Extremely high dv/dt capability du

* 100% avalanche tested ro

* Gate charge minimized P

* Very low intrinsic capacitances te

* Very good manufacturing repeatability sole Application Ob

* Switching

STB20NK50Z

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N-channel power mosfet.

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STB20NK50Z N-CHANNEL POWER MOSFET ST Microelectronics

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