STB20NM60-1 - N-Channel MOSFET

INCHANGE

STB20NM60-1 Datasheet Preview — Preview of STB20NM60-1 PDF

Datasheet Details

Part number	STB20NM60-1
Manufacturer	INCHANGE
File Size	309.53 KB
Description	N-Channel MOSFET
Datasheet	STB20NM60-1-INCHANGE.pdf

STB20NM60-1 Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 20 A 80 A 192 W -65~150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance

Features

Drain Current.
ID= 20A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 4, 2020 |