Datasheet Details
- Part number
- STB20NM60
- Manufacturer
- INCHANGE
- File Size
- 264.84 KB
- Datasheet
- STB20NM60-INCHANGE.pdf
- Description
- N-Channel MOSFET
STB20NM60 Description
isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance
APPLICATIONS.
Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source.
STB20NM60 Features
* Drain Current
* ID= 20A@ TC=25℃
* Drain Source Voltage-
: VDSS= 600V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 290mΩ(Max)
* 100% avalanche tested
STB20NM60 Applications
* Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Tempe
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