STB20NM60-1 Datasheet - ST Microelectronics

STB20NM60-1 N-CHANNEL POWER MOSFET

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the comp.

STB20NM60-1 Features

* Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A

* High dv/dt and avalanche capabilities

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate inpu

STB20NM60-1 Datasheet (408.31 KB)