STB20NM50-1

N-CHANNEL POWER MOSFET

ST Microelectronics

STB20NM50-1 Features

* Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A

* High dv/dt and avalanche capabilities

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Desc

STB20NM50-1 General Description

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances. .

STB20NM50-1 Datasheet (296.99 KB)