STB21N65M5 Datasheet - STMicroelectronics

STB21N65M5 N-CHANNEL MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbas.

STB21N65M5 Features

* Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed

* Worldwide best RDS(on)

* area

* Higher VDSS rating

* High dv/dt capabilit

STB21N65M5-STMicroelectronics.pdf