STB21NK50Z

N-channel MOSFET

STMicroelectronics

STB21NK50Z Features

* Type STB21NK50Z

* VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A Pw 190 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability 3 1 D²PAK Applications

* Switching applications

STB21NK50Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summa.

STB21NK50Z Datasheet (790.14 KB)