Datasheet Details
Part number:
STB21NK50Z
Manufacturer:
File Size:
790.14 KB
Description:
N-channel MOSFET
Features
* Type STB21NK50Z
* VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A Pw 190 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability 3 1 D²PAK Applications
* Switching applications
STB21NK50Z-STMicroelectronics.pdf
STB21NK50Z, N-channel MOSFET
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Table 1.
Device summa
STB21NK50Z Distributor
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