STB21NM60ND - N-channel MOSFET

STMicroelectronics

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Datasheet Details

Part number	STB21NM60ND
Manufacturer	STMicroelectronics
File Size	768.86 KB
Description	N-channel MOSFET
Datasheet	STB21NM60ND_STMicroelectronics.pdf

STB21NM60ND Product details

Description

6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology.Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.They are ideal for bridge topologies and ZVS phase-shift converters.Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND Table 1. Device summary Marking Package 21NM60ND 21NM60ND 2

Features

Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A.
Intrinsic fast-recovery body diode.
Worldwide best RDS(on).
area amongst the fast recovery diode devices.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.
Extremely high dv/dt and avalanche capabilities.

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Published: Jan 4, 2009 |