STB21N90K5 Datasheet - STMicroelectronics

STB21N90K5 N-CHANNEL MOSFET

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for app.

STB21N90K5 Features

* Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W

* TO-220 worldwide best RDS(on)

* Worldwide best FOM (figure of merit)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Applications

STB21N90K5-STMicroelectronics.pdf