STB21NM60N

N-CHANNEL MOSFET

STMicroelectronics

STB21NM60N Features

* Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed P

* 100% avalanche tested te

* Low inpu

STB21NM60N General Description

ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledeman.

STB21NM60N Datasheet (498.95 KB)

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Datasheet Details

Part number:

STB21NM60N

Manufacturer:

STMicroelectronics ↗

File Size:

498.95 KB

Description:

N-channel mosfet.
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDme.

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STB21NM60N N-CHANNEL MOSFET STMicroelectronics

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STB21NM60N Features

STB21NM60N General Description

Datasheet Details

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