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STB27NM60ND N-channel Power MOSFET

STB27NM60ND Description

STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datash.
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

STB27NM60ND Features

* TAB 3 1 D2PAK TO-247 3 2 1 Figure 1. Internal schematic diagram $4!"  ' 3 !-V Order codes VDS@ Tjmax RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.16 Ω 21 A

STB27NM60ND Applications

* and AEC-Q101 qualified
* The worldwide best RDS(on)
* area amongst the fast recovery diode devices
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely high dv/dt and avalanche capabilities Applications

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N-channel Power MOSFET STMicroelectronics
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