STD3NB50

N-CHANNEL MOSFET

STMicroelectronics

STD3NB50 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STD3NB50 Datasheet (91.30 KB)

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STD3NB50

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STMicroelectronics ↗

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N-channel mosfet.
STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 www.DataSheet4U.com s s s s s V DSS 500 V R DS(on.

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STD3NB50 General Description

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