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STD3N30 Datasheet - STMicroelectronics

STD3N30 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 www.DataSheet4U.com s s s s s V DSS 300 V R DS( on) < 1.4 Ω ID 3A s s TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) 2 1 DPAK TO-252 3 (Suffix ”T4”) AP.

STD3N30 Datasheet (176.18 KB)

Preview of STD3N30 PDF

Datasheet Details

Part number:

STD3N30

Manufacturer:

STMicroelectronics ↗

File Size:

176.18 KB

Description:

N-channel enhancement mode power mos transistor.

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STD3N30 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics

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