Description
STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET .
PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well-
known PowerMESH™ horizontal layout structure.
Features
* Type
VDSS
RDS(on)
(@Tjmax) max
)STD3NM60
t(sSTD3NM60-1 650 < 1.5 Ω
cSTP4NM60
ID 3A 4A
PW 42 W 69 W
rodu
* High dv/dt and avalanche capabilities te P
* Improved ESD capability le
* Low input capacitance and gate charge o
* Low gate input resistance bs
* Tight process control
