STD40N2LH5 Datasheet - STMicroelectronics

STD40N2LH5 N-channel Power MOSFET

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on) *Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Dev.

STD40N2LH5 Features

* Type STD40N2LH5 STU40N2LH5

* VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK A

STD40N2LH5_STMicroelectronics.pdf