STD4NK80Z-1

N-channel Power MOSFET

STMicroelectronics

STD4NK80Z-1 Features

* TAB Order code VDS RDS(on) max. ID STD4NK80Z-1 800 V 3.5 Ω 3A 3 2 1

* 100% avalanche tested

* Gate charge minimized IPAK

* Very low intrinsic capacitance

* Zener-protected D(2, TAB) Applications

* Switching applications G(1) Description Thi

STD4NK80Z-1 General Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure .

STD4NK80Z-1 Datasheet (585.07 KB)