STD9NM50N

N-channel Power MOSFET

STMicroelectronics

STD9NM50N Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD9NM50N 500 V 790 mΩ 5A

* AEC-Q101 qualified

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications G(1)

* Switching applications S(3) Descr

STD9NM50N General Description

AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suita.

STD9NM50N Datasheet (633.36 KB)