STD9N10-1 Datasheet (ST Microelectronics) - N-CHANNEL POWER MOS TRANSISTOR

STD9N10-1, N-CHANNEL POWER MOS TRANSISTOR

of Changes 11/12 STD9N10/STD9N10-1 Information furnished is believed to be accurate and reliable.

However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its us

STD9N10-1 Features

* Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package FEATURES SUMMARY

* TYPICAL RDS(on) = 0.23 Ω

* AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE C