STF7N60M2

N-channel Power MOSFET

STMicroelectronics

STF7N60M2 Features

* 3 2 1 TO-220FP Figure 1. Internal schematic diagram , TAB Order code STF7N60M2 VDS @ TJmax 650 V RDS(on) max 0.95 Ω ID 5A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zene

STF7N60M2 General Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui.

STF7N60M2 Datasheet (839.44 KB)