Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure.The result is a dramatic
reduction in on-resistance and ultra-low gate
S(3) charge for applications requiring superior power
AM01476v1_No_tab
density and high efficiency.Table 1: Device summary
Marking
Package
Packing
7N80K5
TO-220FP I²PAKFP (TO-281)
Tube
July 2017
DocID025377 R
Features
- Order code STF7N80K5 STFI7N80K5
VDS 800 V
RDS(on) max. 1.2 Ω
ID PTOT 6 A 25 W
TO-220FP
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram D(2).
- Industry’s lowest RDS(on) x area.
- Industry’s best FoM (figure of merit).
- Ultra-low gate charge.
- 100% avalanche tested.
- Zener-protected.