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STFI11N60M2-EP

N-channel Power MOSFET

STFI11N60M2-EP Features

* 1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on) max. STFI11N60M2-EP 600 V 0.595 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected ID 7.5 A Ap

STFI11N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching l.

STFI11N60M2-EP Datasheet (281.78 KB)

Preview of STFI11N60M2-EP PDF

Datasheet Details

Part number:

STFI11N60M2-EP

Manufacturer:

STMicroelectronics ↗

File Size:

281.78 KB

Description:

N-channel power mosfet.

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STFI11N60M2-EP N-channel Power MOSFET STMicroelectronics

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