STFI11N60M2-EP - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.
Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching l
STFI11N60M2-EP Features
* 1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on) max. STFI11N60M2-EP 600 V 0.595 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* Very low turn-off switching losses
* 100% avalanche tested
* Zener-protected ID 7.5 A Ap
