STFI11N65M2 - N-channel Power MOSFETs
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They are therefo
STFI11N65M2 Features
* 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram '
* 6 AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistanc
