STFI11N65M2 Datasheet - STMicroelectronics

STFI11N65M2 N-channel Power MOSFETs

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefo.

STFI11N65M2 Features

* 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram '

* 6 AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistanc

STFI11N65M2 Datasheet (450.13 KB)