O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.
These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
The
STFI11NM65N Features
* 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N
* 100% avalanche tested d D(2, TAB)
* Low input capacitance and gate charge ro
* Low gate input resistance te P Applicatio
STF11NM65N-STMicroelectronics.pdf
Datasheet Details
STFI11NM65N, STF11NM65N
532.10 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: STFI11NM65N, STF11NM65N.
Please refer to the document for exact specifications by model.
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