Description
O S(3)
uct(s) - AM01475v1_noZen
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.They are therefore suitable for the most demanding high-efficiency converters.olete Prod Product status links ObsSTF11NM65N
STFI11NM65N
STP11NM65N
DS14294 - Rev 1 - May 2023 For further information
Features
- 123
TO-220FP
TO-2201 23
Order codes STF11NM65N
VDS
RDS(on) max. ID
t(s) 123
I2PAKFP
uc (TO-281)
STFI11NM65N
650 V
455 mΩ
11 A
STP11NM65N.
- 100% avalanche tested
d D(2, TAB).
- Low input capacitance and gate charge
ro.
- Low gate input resistance
te P.