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STFI11NM65N, STF11NM65N Datasheet - STMicroelectronics

STFI11NM65N N-channel MOSFET

O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. The.

STFI11NM65N Features

* 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N

* 100% avalanche tested d D(2, TAB)

* Low input capacitance and gate charge ro

* Low gate input resistance te P Applicatio

STF11NM65N-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STFI11NM65N, STF11NM65N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STFI11NM65N, STF11NM65N

Manufacturer:

STMicroelectronics ↗

File Size:

532.10 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: STFI11NM65N, STF11NM65N.
Please refer to the document for exact specifications by model.

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STFI11NM65N STF11NM65N N-channel MOSFET STMicroelectronics

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