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STFI9N60M2

N-CHANNEL POWER MOSFET

STFI9N60M2 Features

* Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic d

STFI9N60M2 General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor.

STFI9N60M2 Datasheet (419.43 KB)

Preview of STFI9N60M2 PDF

Datasheet Details

Part number:

STFI9N60M2

Manufacturer:

STMicroelectronics ↗

File Size:

419.43 KB

Description:

N-channel power mosfet.
STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production.

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STFI9N60M2 N-CHANNEL POWER MOSFET STMicroelectronics

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