STGW19NC60WD

N-channel IGBT

STMicroelectronics

STGW19NC60WD Features

* Type VCES VCE(sat) (max)@25°C IC @100°C STGP19NC60WD 600V STGW19NC60WD 600V < 2.5V < 2.5V 22A 23A

* High frequency operation

* Low CRES / CIES ratio (no cross-conduction susceptibility)

* Very soft ultra fast recovery antiparallel diode Description Using the latest high voltage

STGW19NC60WD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. Applications
* High freq.

STGW19NC60WD Datasheet (293.60 KB)