STGW100H65FB2-4 Datasheet, Igbt, STMicroelectronics

STGW100H65FB2-4 Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
• Minimized tail current
• Tight parameter distribution

PDF File Details

Part number:

STGW100H65FB2-4

Manufacturer:

STMicroelectronics ↗

File Size:

249.19kb

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📄 Datasheet

Description:

Igbt. The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performanc

STGW100H65FB2-4 Application

• Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers E(2) NG4K3E2C1TAB_no_di

TAGS

STGW100H65FB2-4

STMicroelectronics

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