STGW100H65FB2-4 IGBT

STMicroelectronics

Description

STGW100H65FB2-4 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package TO247-4 2 34 1 C(1,TAB) G(4) K(3) .
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGW100H65FB2-4
Manufacturer: STMicroelectronics ↗
File Size: 249.19 KB
Datasheet: STGW100H65FB2-4-STMicroelectronics.pdf
Description: IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) temperature coefficient
* Excellent switching performan

Applications

* Welding
* Power factor correction
* UPS
* Solar inverters

STGW100H65FB2-4 Distributors

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STGW100H65FB2-4 IGBT STMicroelectronics

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