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STGW15M120DF3

Trench gate field-stop IGBT

STGW15M120DF3 Features

* 10 µs of short-circuit withstand time

* VCE(sat) = 1.85 V (typ.) @ IC = 15 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

* Soft and fast recovery antiparallel diode Applications

* Industrial drives

* U

STGW15M120DF3 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential..

STGW15M120DF3 Datasheet (1.02 MB)

Preview of STGW15M120DF3 PDF

Datasheet Details

Part number:

STGW15M120DF3

Manufacturer:

STMicroelectronics ↗

File Size:

1.02 MB

Description:

Trench gate field-stop igbt.
STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data    72 72ORQJOHDGV F.

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STGW15M120DF3 Trench gate field-stop IGBT STMicroelectronics

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