STGW15M120DF3 Datasheet - STMicroelectronics

STGW15M120DF3 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential..

STGW15M120DF3 Features

* 10 µs of short-circuit withstand time

* VCE(sat) = 1.85 V (typ.) @ IC = 15 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

* Soft and fast recovery antiparallel diode Applications

* Industrial drives

* U

STGW15M120DF3-STMicroelectronics.pdf