STGW15M120DF3 Datasheet, Igbt, STMicroelectronics

STGW15M120DF3 Features

• Igbt
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Tight parameters distribution
• Safer paralleling
• Low thermal

PDF File Details

Part number:

STGW15M120DF3

Manufacturer:

STMicroelectronics ↗

File Size:

1.02MB

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📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series o

STGW15M120DF3 Application

• Applications
• Industrial drives
• UPS
• Solar
• Welding Description This device is an IGBT developed using an advan

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STGW15M120DF3

STMicroelectronics

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