STGW15M120DF3 - Trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.
STGW15M120DF3 Features
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.85 V (typ.) @ IC = 15 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistance
* Soft and fast recovery antiparallel diode Applications
* Industrial drives
* U
