STGW100N30

Fast IGBT

STMicroelectronics

STGW100N30 Features

* Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency High repet

STGW100N30 General Description

Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets. TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Marking GF100N30 GP100N30 GW100N30 Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube Order co.

STGW100N30 Datasheet (718.24 KB)