STGW100N30 Datasheet, Igbt, STMicroelectronics

STGW100N30 Features

• Igbt
• Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current I

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Part number:

STGW100N30

Manufacturer:

STMicroelectronics ↗

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718.24kb

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📄 Datasheet

Description:

Fast igbt. Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets. TO-22

STGW100N30 Application

• Applications State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)

TAGS

STGW100N30

STMicroelectronics

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