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STGWA60H65DFB, STGW60H65DFB - Trench gate field-stop IGBT

STMicroelectronics

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STGWA60H65DFB Datasheet Preview — This datasheet PDF includes multiple part numbers: STGWA60H65DFB, STGW60H65DFB. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	STGWA60H65DFB, STGW60H65DFB
Manufacturer	STMicroelectronics
File Size	685.37 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW60H65DFB-STMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: STGWA60H65DFB, STGW60H65DFB. Please refer to the document for exact specifications by model.

STGWA60H65DFB Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Sep 6, 2017 |