STGWA60V60DWFAG - IGBT
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore, the posit
STGWA60V60DWFAG Features
* G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* VCE(sat) = 1.85 V (typ.) @ IC = 60 A
* Tail-less switching current
* Tight parameter distribution
* Low thermal resistance
