STGWA60V60DWFAG - IGBT

STMicroelectronics

Datasheet Details

Part number	STGWA60V60DWFAG
Manufacturer	STMicroelectronics
File Size	615.04 KB
Description	IGBT
Datasheet	STGWA60V60DWFAG-STMicroelectronics.pdf

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG.
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
Tail-less switching current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.
Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration.

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Published: Mar 17, 2020 |