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STGWA60V60DWFAG Datasheet - STMicroelectronics

STGWA60V60DWFAG - IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the posit

STGWA60V60DWFAG Features

* G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tail-less switching current

* Tight parameter distribution

* Low thermal resistance

STGWA60V60DWFAG-STMicroelectronics.pdf

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