STGWA60V60DWFAG

IGBT

STMicroelectronics

STGWA60V60DWFAG Features

* G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tail-less switching current

* Tight parameter distribution

* Low thermal resistance

STGWA60V60DWFAG General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the posit.

STGWA60V60DWFAG Datasheet (615.04 KB)