STGWA100H65DFB2 - IGBT
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
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STGWA100H65DFB2 Features
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera
