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STGWA100H65DFB2

IGBT

STGWA100H65DFB2 Features

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A

* Very fast and soft recovery co-packaged diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) tempera

STGWA100H65DFB2 General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A.

STGWA100H65DFB2 Datasheet (315.65 KB)

Preview of STGWA100H65DFB2 PDF

Datasheet Details

Part number:

STGWA100H65DFB2

Manufacturer:

STMicroelectronics ↗

File Size:

315.65 KB

Description:

Igbt.
STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package TO-247 long leads C(2, TAB).

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STGWA100H65DFB2 IGBT STMicroelectronics

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