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STGWA100H65DFB2 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGWA100H65DFB2
Manufacturer	STMicroelectronics ↗
File Size	315.65 KB
Description	IGBT
Datasheet	STGWA100H65DFB2-STMicroelectronics.pdf

STGWA100H65DFB2 Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A.
Very fast and soft recovery co-packaged diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient NG1E3C2T.

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Published: Jun 26, 2023 |