STGWA100H65DFB2 Datasheet - STMicroelectronics

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STGWA100H65DFB2 IGBT

STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package TO-247 long leads C(2, TAB).
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

STGWA100H65DFB2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGWA100H65DFB2

Manufacturer:

STMicroelectronics ↗

File Size:

315.65 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera

Applications

* Welding
* Power factor correction
* UPS
* Solar inverters

STGWA100H65DFB2 Distributors

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STGWA100H65DFB2 IGBT STMicroelectronics

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