STGWA25H120DF2

Trench gate field-stop IGBT

STMicroelectronics

STGWA25H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V (typ.) @ IC = 25 A

* 5 μs minimum short circuit withstand time at TJ = 150 °C

* Safe paralleling

* Low thermal resistance

STGWA25H120DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, .

STGWA25H120DF2 Datasheet (474.85 KB)