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STGWA25H120DF2, STGW25H120DF2 Datasheet - STMicroelectronics

STGWA25H120DF2 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, .

STGWA25H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V (typ.) @ IC = 25 A

* 5 μs minimum short circuit withstand time at TJ = 150 °C

* Safe paralleling

* Low thermal resistance

STGW25H120DF2-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STGWA25H120DF2, STGW25H120DF2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STGWA25H120DF2, STGW25H120DF2

Manufacturer:

STMicroelectronics ↗

File Size:

911.18 KB

Description:

Trench gate field-stop igbt.

Note:

This datasheet PDF includes multiple part numbers: STGWA25H120DF2, STGW25H120DF2.
Please refer to the document for exact specifications by model.

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STGWA25H120DF2 STGW25H120DF2 Trench gate field-stop IGBT STMicroelectronics

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