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STGWA25H120F2

Trench gate field-stop IGBT

STGWA25H120F2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V (typ.) @ IC = 25 A

* 5 µs minimum short circuit withstand time at TJ=150 °C

* Tight parameters distribution

* Safe paralleling

STGWA25H120F2 General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover.

STGWA25H120F2 Datasheet (601.16 KB)

Preview of STGWA25H120F2 PDF

Datasheet Details

Part number:

STGWA25H120F2

Manufacturer:

STMicroelectronics ↗

File Size:

601.16 KB

Description:

Trench gate field-stop igbt.
STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data 72       72ORQ.

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STGWA25H120F2 Trench gate field-stop IGBT STMicroelectronics

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