STGWA20HP65FB2 Datasheet - STMicroelectronics

STGWA20HP65FB2 IGBT

NG1E3C2T The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switc.

STGWA20HP65FB2 Features

* Maximum junction temperature : TJ = 175 °C

* Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A

* Co-packaged protection diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) temperature coefficient

STGWA20HP65FB2-STMicroelectronics.pdf