STGWA20HP65FB2 IGBT

STMicroelectronics

Description

STGWA20HP65FB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package C(2, TAB) G(1) .
NG1E3C2T The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGWA20HP65FB2
Manufacturer: STMicroelectronics ↗
File Size: 369.35 KB
Datasheet: STGWA20HP65FB2-STMicroelectronics.pdf
Description: IGBT

Features

* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ. ) @ IC = 20 A
* Co-packaged protection diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) temperature coefficient

Applications

* Welding

STGWA20HP65FB2 Distributors

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STGWA20HP65FB2 IGBT STMicroelectronics

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