STGWA20HP65FB2 - IGBT
NG1E3C2T The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switc
STGWA20HP65FB2 Features
* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
* Co-packaged protection diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) temperature coefficient
