Description
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long.
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature
Applications
* Photovoltaic inverters