STGWT20H65FB Datasheet, Igbt, STMicroelectronics

STGWT20H65FB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Tight

PDF File Details

Part number:

STGWT20H65FB

Manufacturer:

STMicroelectronics ↗

File Size:

451.82kb

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📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB seri

STGWT20H65FB Application

• Applications
• Photovoltaic inverters
• Power factor correction
• Welding
• High-frequency converters Description Th

TAGS

STGWT20H65FB

STMicroelectronics

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