STGWT20V60F Datasheet - STMicroelectronics

STGWT20V60F IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furth.

STGWT20V60F Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

STGWT20V60F Datasheet (482.81 KB)