Description
STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data 1 3 2 1 TO-3PF TAB 3 2 1 T.
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series
* Tail-less switching off
* Low saturation voltage: VCE(sat) = 1.8 V (typ. )
@ IC = 20 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
Applications
* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction