STH47N60DM6-2AG Datasheet - STMicroelectronics

STH47N60DM6-2AG N-channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be.

STH47N60DM6-2AG Features

* Order code STH47N60DM6-2AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A

* AEC-Q101 qualified

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely

STH47N60DM6-2AG Datasheet (637.93 KB)