STL64DN4F7AG Datasheet - STMicroelectronics

STL64DN4F7AG Automotive-grade dual N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. NG14G22D1D2RSS13S21 Product status link STL64DN4F7AG P.

STL64DN4F7AG Features

* Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

STL64DN4F7AG-STMicroelectronics.pdf