STL64N4F7AG Datasheet - STMicroelectronics

STL64N4F7AG Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL64N4F7AG Product summary Order.

STL64N4F7AG Features

* Order code VDS RDS(on) max. ID STL64N4F7AG 40 V 8.5 mΩ 64 A 4 3 2 1

* AEC-Q101 qualified PowerFLAT™ 5x6

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit) D(5, 6, 7, 8) 8 76 5

* Low Crss/Ciss ratio for EMI immunity

* High

STL64N4F7AG-STMicroelectronics.pdf