STN6N60M2

N-Channel MOSFET

STMicroelectronics

STN6N60M2 Features

* Order code VDS STN6N60M2 600 V

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3) Applications

* Switching applications G(1) Description This device

STN6N60M2 General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high effi.

STN6N60M2 Datasheet (258.04 KB)